Integrated Circuits, SOI-ASIC, CMOS, Monolithic Silicon
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Technology:
0.15um CMOS/Fully-depleted SOI process, 6-layer wiring
Radiation hardness: SEU resistance: LETth >64[MeV/(mg/cm2)]
SEL resistance: SEL free
TID resistance: 1000[Gy(Si)]
Maximum number of cells: 5.6M cell
Gate delay time:
43psec (Normal type)
33psec (High speed type)
Gate power dissipation :
0.0148pW/MHz (Normal type)
0.0150pW/MHz (High speed
type)
Maximum operating frequency:
1265MHz (Normal type)
1703MHz (High speed type)
RHBD memory: 50 to 100MHz、72kbit as a maximum
IO: CMOS level, Stagger
Package: 304 lead CQFP |
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Certified on November 12, 2010 Detail Specification : JAXA-QTS-2010/103
Application Data Sheet : JAXA-ADS-2010/103 |
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